Method for preparing light absorption layer of copper-indium-gallium-sulfur-selenium thin film solar cells
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Aug 15, 2017
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Jun 29, 2010
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Dec 29, 2007
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Abstract
A preparation method of the light absorption layer of a copper-indium-gallium-sulfur-selenium film solar cell is provided. The method employs a non-vacuum liquid-phase chemical technique, which comprises following steps: forming source solution containing copper, indium, gallium, sulfur and selenium; using the solution to form a precursor film on a substrate by a non-vacuum liquid-phase process; drying and annealing the precursor film. Thus, a compound film of copper-indium-gallium-sulfur-selenium is gained.
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