Method for fabricating a finFET device including a stem region of a fin element
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United States of America Patent
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Aug 15, 2017
Issued Date -
N/A
app pub date -
Jan 18, 2013
filing date -
Jan 18, 2013
priority date (Note) -
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status (Latency Note)
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Abstract
A method includes providing a substrate having a fin extending from a first (e.g., top) surface of the substrate. The fin has first region (a stem region) and a second region (an active region) each having a different composition. The first region of the fin is modified to decrease a width of semiconductor material for example by etching and/or oxidizing the first region of the fin. The method then continues to provide a gate structure on the second region of the fin. FinFET devices having stem regions with decreased widths of semiconductor material are also provided.
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Patent Citation Ranking
- 2 Citation Count
- H01L Class
- 18.50 % this patent is cited more than
- 8 Age
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| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Feb 15, 2025 |
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