Resistive memory device with ramp-up/ramp-down program/erase pulse
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United States of America Patent
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Aug 15, 2017
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app pub date -
Sep 22, 2015
filing date -
May 11, 2012
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Abstract
In one embodiment, a method of operating a resistive switching device includes applying a signal comprising a pulse on a first terminal of a two terminal resistive switching device having the first terminal and a second terminal. The resistive switching device has a first state and a second state. The pulse includes a first ramp from a first voltage to a second voltage over a first time period. The first time period is at least 0.1 times a total time period of the pulse.
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