Extreme ultraviolet lithography process and mask

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United States of America Patent

PATENT NO 9733562
SERIAL NO

14923243

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Abstract

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An apparatus comprises a low EUV reflectivity (LEUVR) mask. The LEUVR mask includes a low thermal expansion material (LTEM) layer; a reflective multilayer (ML) over the LTEM layer; and a patterned absorption layer over the reflective ML. The reflective ML has less than 2% EUV reflectivity.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN RD 6 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU 300-77 R O C

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Jeng-Horng Hsin-Chu, TW 137 3250
Lu, Yen-Cheng New Taipei, TW 85 1437
Yen, Anthony Hsinchu, TW 157 3414
Yu, Shinn-Sheng Hsinchu, TW 132 3917

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