Production apparatus and production method of SiC single crystal
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United States of America Patent
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Aug 15, 2017
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app pub date -
Jun 15, 2012
filing date -
Jun 17, 2011
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Abstract
An apparatus for producing an SiC single crystal includes a crucible for accommodating an Si—C solution and a seed shaft having a lower end surface where an SiC seed crystal (36) would be attached. The seed shaft includes an inner pipe that extends in a height direction of the crucible and has a first passage. An outer pipe accommodates the inner pipe and constitutes a second passage between itself and the inner pipe and has a bottom portion whose lower end surface covers a lower end opening of the outer pipe. One passage of the first and second passages serves as an introduction passage where coolant gas flows downward, and the other passage serves as a discharge passage where coolant gas flows upward. A region inside the pipe that constitutes the introduction passage is to be overlapped by a region of not less than 60% of the SiC seed crystal.
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