SiC single-crystal ingot, SiC single crystal, and production method for same
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United States of America Patent
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Aug 15, 2017
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Apr 16, 2013
filing date -
Jun 5, 2012
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Abstract
Provided are an SiC single-crystal ingot containing an SiC single crystal having a low threading dislocation density and low resistivity; an SiC single crystal; and a production method for the SiC single crystal. The SiC single crystal ingot contains a seed crystal and a grown crystal grown by a solution process in which the seed crystal is the base point, the grown crystal of the SiC single crystal ingot containing a nitrogen density gradient layer in which the nitrogen content increases in the direction of growth from the seed crystal.
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