Nanocrystalline quantum dot heterostructure
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United States of America Patent
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Aug 15, 2017
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Jul 1, 2016
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Jul 2, 2015
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Abstract
A semiconductor structure includes a nanocrystalline core comprising a first semiconductor material having a first bandgap, and a nanocrystalline shell comprising a second semiconductor material different than the first semiconductor material at least partially surrounding the nanocrystalline core, the second semiconductor material having a second bandgap greater than the first bandgap.
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