Clamp based ESD protection circuits
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United States of America Patent
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Aug 8, 2017
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app pub date -
Apr 13, 2012
filing date -
Apr 13, 2011
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Abstract
An electro-static discharge (ESD) protection circuit utilizes a gate-drain breakdown characteristic of high electron mobility transistors (HEMTs) in a dual stacked configuration to provide a discharge path for electro-static discharges, while having a minimal effect on the associated circuit which is being protected.
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