Semiconductor device and method for manufacturing the same
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United States of America Patent
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Aug 8, 2017
Grant Date -
Dec 5, 2013
app pub date -
Nov 28, 2012
filing date -
May 30, 2012
priority date (Note) -
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Abstract
A semiconductor device includes a fuse pattern disposed over a semiconductor substrate, an epoxy mold compound (EMC) layer disposed over the fuse pattern, a first package substrate disposed over the EMC layer, an insulating film disposed over the first package substrate, and a second package substrate disposed over the insulating film. To the first package substrate, a Vss voltage or a negative voltage lower than the Vss voltage is applied to prevent impurities from migrating to the fuse pattern.
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