Semiconductor memory device for performing repair operations based on repair information stored therein

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United States of America Patent

PATENT NO 9728269
APP PUB NO 20170117057A1
SERIAL NO

15048486

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Abstract

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A semiconductor memory device includes a memory array region including normal cells and redundancy cells; a repair fuse block including a plurality of fuse sets suitable for programming repair addresses of the repair target cells as repair information, the repair fuse block being suitable for outputting the programmed repair information, in response to a boot-up signal; a fuse information storage block including a plurality of memory cells for storing the repair information outputted from the repair fuse block, the plurality of memory cells being refreshed simultaneously with the normal cells and the redundancy cells of the memory array region; and a repair control block suitable for comparing the repair information stored in the fuse information storage block and an address to generate a repair control signal to selectively activate redundant paths between the repair target cells and the redundancy cells.

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Patent Owner(s)

Patent OwnerAddress
MIMIRIP LLC9330 LBJ FREEWAY SUITE 900 DALLAS TX 75243

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Park, Ga-Ram Gyeonggi-do, KR 9 44
Park, Jun-Cheol Gyeonggi-do, KR 7 14

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