Method for epitaxial growth of monocrystalline silicon carbide using a feed material including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph
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United States of America Patent
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Aug 8, 2017
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Oct 17, 2013
app pub date -
Jun 29, 2011
filing date -
Dec 24, 2010
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Abstract
Provided is a feed material for epitaxial growth of a monocrystalline silicon carbide capable of increasing the rate of epitaxial growth of silicon carbide. A feed material 11 for epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon X-ray diffraction of the surface layer, a diffraction peak corresponding to a (111) crystal plane and a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph.
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