Semiconductor light-emitting device
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United States of America Patent
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Aug 1, 2017
Issued Date -
N/A
app pub date -
Aug 19, 2015
filing date -
Mar 12, 2015
priority date (Note) -
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Abstract
According to one embodiment, the p-side electrode is provided on the second semiconductor layer. The insulating film is provided on the p-side electrode. The n-side electrode includes a first portion, a second portion, and a third portion. The first portion is provided on a side face of the first semiconductor layer. The second portion is provided in the first n-side region. The third portion overlaps the p-side electrode via the insulating film and connects the first portion and the second portion to each other.
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