Source/drain junction formation
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United States of America Patent
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Aug 1, 2017
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app pub date -
Oct 17, 2013
filing date -
Oct 17, 2013
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Abstract
An embodiment method of forming a source/drain region for a transistor includes forming a recess in a substrate, epitaxially growing a semiconductor material in the recess, amorphizing the semiconductor material, and doping the semiconductor material to form a source/drain region. In an embodiment, the doping utilizes either phosphorus or boron as the dopant. Also, the amorphizing and the doping may be performed simultaneously. The amorphizing may be performed at least in part by doping with helium.
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