Methods for forming crystalline IGZO with a seed layer
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United States of America Patent
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Aug 1, 2017
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app pub date -
Dec 23, 2013
filing date -
Dec 23, 2013
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Abstract
Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. A seed layer is formed above the substrate. The seed layer has a crystalline structure that is substantially dominant along the c-axis. An IGZO layer is formed above the seed layer. The seed layer may include zinc oxide. A stack of alternating seed layers and IGZO layers may be formed.
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