Semiconductor structure in which film including germanium oxide is provided on germanium layer, and method for manufacturing semiconductor structure
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United States of America Patent
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Aug 1, 2017
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Jun 6, 2014
filing date -
Aug 30, 2013
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Abstract
A semiconductor structure includes: a germanium layer; and a first insulating film that is formed on an upper surface of the germanium layer, primarily contains germanium oxide and a substance having an oxygen potential lower than an oxygen potential of germanium oxide, and has a physical film thickness of 3 nm or less; wherein a half width of frequency to height in a 1 μm square area of the upper surface of the germanium layer is 0.7 nm or less.
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