Method for producing the growth of a semiconductor material
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United States of America Patent
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Aug 1, 2017
Grant Date -
Dec 11, 2014
app pub date -
Aug 22, 2014
filing date -
Jan 10, 2007
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Abstract
A method for producing the growth of a semiconductor material, in particular of type II-VI, uses a melt of the semiconductor placed in a sealed bulb under vacuum or under controlled atmosphere, the bulb being subjected to a sufficient temperature gradient for first maintaining the melt in the liquid state, then causing its progressive crystallization from the surface towards the bottom. The method further comprises an element capable of floating on the surface of the melt, and equipped with a substantially central bore, intended for receiving a seed crystal for permitting the nucleation leading to the preparation of a seed crystal, and also supporting the seed crystal above the melt while maintaining it in contact with the melt in order to permit the continued crystallization from the seed crystal by lowering the temperature gradient.
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