Self-bypass diode function for gallium arsenide photovoltaic devices
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United States of America Patent
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Jul 25, 2017
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Feb 9, 2011
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Feb 9, 2011
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Abstract
Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.
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