Semiconductor device, method for driving semiconductor device, and electronic device
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United States of America Patent
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Jul 25, 2017
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app pub date -
Mar 10, 2015
filing date -
Mar 14, 2014
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Abstract
A novel semiconductor device that can write and read multilevel data is provided. A memory cell includes a bit line, a power supply line, first and second nodes, first to fourth transistors, and first and second capacitors. One of two divided multilevel data is written to the first node through the first transistor. The other of the divided multilevel data is written to the second node through the second transistor. A gate of the third transistor is connected to the first node, and a gate of the fourth transistor is connected to the second node. The third and fourth transistors control electrical continuity between the bit line and the power supply line. Each of the first and second transistors preferably includes an oxide semiconductor in a semiconductor layer.
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