Crystal laminate structure and method for producing same
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United States of America Patent
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Jul 25, 2017
Grant Date -
Aug 7, 2014
app pub date -
Aug 2, 2012
filing date -
Sep 8, 2011
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Abstract
A crystal laminate structure, in which crystals can be epitaxially grown on a β-Ga2O3-based substrate with high efficiency to produce a high-quality β-Ga2O3-based crystal film on the substrate; and a method for producing the crystal laminate structure are provided. The crystal laminate structure includes: a β-Ga2O3-based substrate, of which the major face is a face that is rotated by 50 to 90° inclusive with respect to face; and a β-Ga2O3-based crystal film which is formed by the epitaxial crystal growth on the major face of the β-Ga2O3-based substrate.
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