Wafer-based light source parameter control
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United States of America Patent
Stats
-
Jul 25, 2017
Issued Date -
N/A
app pub date -
Jun 4, 2014
filing date -
Jun 11, 2013
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A photolithography method includes instructing an optical source to produce a pulsed light beam; scanning the pulsed light beam across a wafer of a lithography exposure apparatus to expose the wafer with the pulsed light beam; during scanning of the pulsed light beam across the wafer, receiving a characteristic of the pulsed light beam at the wafer; receiving a determined value of a physical property of a wafer for a particular pulsed light beam characteristic; and based on the pulsed light beam characteristic that is received during scanning and the received determined value of the physical property, modifying a performance parameter of the pulsed light beam during scanning across the wafer.
First Claim
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Family
International Classification(s)
- 2014 Application Filing Year
- G03B Class
- 1918 Applications Filed
- 1728 Patents Issued To-Date
- 90.10 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 8 Citation Count
- G03B Class
- 18.75 % this patent is cited more than
- 8 Age
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|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Jan 25, 2025 |
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