Wafer shape thickness and trench measurement
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United States of America Patent
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Jul 25, 2017
Grant Date -
Oct 11, 2012
app pub date -
Apr 8, 2011
filing date -
Apr 8, 2011
priority date (Note) -
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Abstract
A device (10) and methods for simultaneously measuring the thickness of individual wafer layers, the depth of etched features on a wafer, and the three-dimensional profile of a wafer. The structure of the device (10) is comprised of a source/receiver section (12) having a broadband source (14), a receiver (16) and a signal processing section (20). An interferometer (28) separates or combines measurement and reference light and has a measurement leg (30) and a reference leg (34), and a reference mirror (36). The device (10) analyzes a received spectrum which is comprised of a measurement of intensity versus wavelength. There are two measurement methods disclosed: the first method is utilized for taking a single measurement and the second method is utilized for multiple measurements.
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