Nonvolatile memory elements having conductive structures with semimetals and/or semiconductors
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 18, 2017
Issued Date -
N/A
app pub date -
Mar 17, 2014
filing date -
Mar 15, 2013
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A memory element programmable between different impedance states can include a first electrode layer comprising a semimetal or semiconductor (semimetal/semiconductor); a second electrode; and a switch layer formed between the first and second electrodes and comprising an insulating material; wherein atoms of the semimetal/semiconductor provide a reversible change in conductivity of the insulating material by application of electric fields.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully