Semiconductor device, or crystal
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United States of America Patent
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Jul 18, 2017
Grant Date -
Jul 9, 2015
app pub date -
Sep 24, 2013
filing date -
Sep 28, 2012
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Abstract
There is provided a semiconductor device including corundum crystal films of good quality. There is provided a semiconductor device including a base substrate, a semiconductor layer, and an insulating film each having a corundum crystal structure. Materials having a corundum crystal structure include many types of oxide films capable of functioning as an insulating film. Since all the base substrate, the semiconductor layer, and the insulating film have a corundum crystal structure, it is possible to achieve a semiconductor layer and an insulating film of good quality on the base substrate.
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