EUV mask and manufacturing method by using the same
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United States of America Patent
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Jul 18, 2017
Grant Date -
May 26, 2016
app pub date -
Jun 11, 2015
filing date -
Nov 26, 2014
priority date (Note) -
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Abstract
The present disclosure provides a photolithography mask. The photolithography mask includes a substrate that contains a low thermal expansion material (LTEM). A reflective structure is disposed over the substrate. A capping layer is disposed over the reflective structure. An absorber layer is disposed over the capping layer. The absorber layer contains a material that has a refractive index in a range from about 0.95 to about 1.01 and an extinction coefficient greater than about 0.03.
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