Ferroelectric thin film, method of manufacturing same and method of manufacturing piezoelectric element

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United States of America Patent

PATENT NO 9705070
APP PUB NO 20130228454A1
SERIAL NO

13884869

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Abstract

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In order to obtain a ferroelectric thin film that is formed to have a predetermined thickness on a substrate, that have satisfactory crystallization and that achieves a high piezoelectric property, a method of manufacturing such a ferroelectric thin film and a method of manufacturing a piezoelectric element having such a ferroelectric thin film, when a dielectric material of a perovskite structure is formed into a film on the substrate, a predetermined amount of additive is mixed with PZT, and the concentration of the additive mixed is varied in the thickness direction of the thin film.

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Patent Owner(s)

Patent OwnerAddress
KONICA MINOLTA INCJAPAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mawatari, Kenji Ibaraki, JP 9 17

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