UV LED with tunnel-injection layer
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United States of America Patent
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Jul 11, 2017
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app pub date -
Apr 18, 2013
filing date -
Apr 18, 2012
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Abstract
An ultraviolet (UV) light emitting structure, a UV light emitting device, and a method of making a UV light emitting structure or device, wherein the UV light emitting structure or device has an AlN or AlGaN injection layer with high aluminum content between the light emitting active region and the p-doped layers and wherein the injection layer has a thickness such that holes can tunnel from the p-side of the semiconductor-based ultraviolet light emitting diode structure through the injection layer in the active zone and also reducing leakage electrons out of the active zone.
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