Method for controlling surface charge on wafer surface in semiconductor fabrication

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United States of America Patent

PATENT NO 9704714
APP PUB NO 20160307757A1
SERIAL NO

14688191

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Abstract

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A method for processing a semiconductor wafer is provided. The method includes performing a discharging process over the semiconductor wafer in a discharging chamber which is enclosed. The method further includes processing the semiconductor wafer by use of a first processing module after the discharging process. During the discharging process, charged particles applied on the semiconductor wafer are tuned based on the characteristics of the surface of the semiconductor wafer.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chuang, Jui-Ping Hsinchu, TW 27 168
Ku, Shao-Yen Jhubei, TW 38 127
Lu, Chen-Hsiang Hsinchu, TW 31 164
Yu, Weibo Hsinchu, TW 9 46

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