Method for manufacturing single-crystal silicon
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United States of America Patent
Stats
-
Jul 11, 2017
Grant Date -
Feb 12, 2015
app pub date -
Jul 10, 2012
filing date -
Dec 26, 2011
priority date (Note) -
In Force
status (Latency Note)
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Abstract
The success rate of multi-pulled single crystal growth by the Czochralski method is enhanced by the use of a melt crucible having an amount of barium on an inner surface thereof which varies inversely with the diameter of the crucible. At least one single crystal is separated from the melt by a free span method.
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International Classification(s)
- 2012 Application Filing Year
- C30B Class
- 390 Applications Filed
- 342 Patents Issued To-Date
- 87.70 % Issued To-Date
Cited Art Landscape
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- 0 Citation Count
- C30B Class
- 0 % this patent is cited more than
- 8 Age
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| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Jan 11, 2025 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Jan 11, 2029 |
