Method and apparatus for irradiating a semiconductor material surface by laser energy

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United States of America Patent

PATENT NO 9700959
SERIAL NO

13263219

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Abstract

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A method for irradiating semiconductor material is provided which includes selecting a region of a semiconductor layer surface, irradiating the region with an excimer laser which has a beam spot size, and adjusting the beam spot size to match the selected region size. Further, an apparatus for irradiating semiconductor material is provided. The apparatus includes an excimer laser for irradiating a selected region of a semiconductor layer surface, the laser has a laser beam spot size, and a system for adjusting the laser beam spot size to match the selected region size.

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Patent Owner(s)

Patent OwnerAddress
LASER SYSTEMS & SOLUTIONS OF EUROPE92230 GENNEVILLIERS

International Classification(s)

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  • 2010 Application Filing Year
  • H01L Class
  • 16510 Applications Filed
  • 13147 Patents Issued To-Date
  • 79.64 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances20102011201220132014201520162017201820192020202120220255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bucchia, Marc Herblay, FR 1 4
Dutems, Cyril Colombes, FR 3 4
Godard, Bruno Les Ulis, FR 9 31
Venturini, Julien Paris, FR 2 7

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Patent Citation Ranking

  • 1 Citation Count
  • H01L Class
  • 18.50 % this patent is cited more than
  • 8 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges26979357140748325312788503629173801 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +050010001500200025003000350040004500500055006000650070007500800085009000950010000

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