Method for measuring temperature of film in reaction chamber
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United States of America Patent
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Jul 4, 2017
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app pub date -
Jul 16, 2014
filing date -
Jul 17, 2013
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Abstract
A method for measuring a temperature of a film in a reaction chamber is provided. The method includes: obtaining reflectivity sampling data R of a sampling point set in a detection area of the film for light with a wavelength λ, and thermal radiation value sampling data E of the sampling point set; obtaining a first correction factor α and a second correction factor γ according to values of at least two sampling data groups, wherein 0<α≦1, 0≦γ≦1; obtaining a blackbody radiation value Lb of the detection area of the film for the light with the wavelength λ according to the first correction factor α, the second correction factor γ and the values of the at least two sampling data groups; obtaining a temperature T of the detection area by looking up a table according to the blackbody radiation value Lb and the wavelength λ.
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