Single-cystalline aluminum nitride substrate and a manufacturing method thereof

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United States of America Patent

PATENT NO 9691942
APP PUB NO 20140346638A1
SERIAL NO

14366020

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Abstract

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The present invention relates to a single-crystalline aluminum nitride wherein a carbon concentration is 1×1014 atoms/cm3 or more and less than 3×1017 atoms/cm3, a chlorine concentration is 1×1014 to 1×1017 atoms/cm3, and an absorption coefficient at 265 nm wavelength is 40 cm−1 or less.

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Patent Owner(s)

Patent OwnerAddress
TOKUYAMA CORPORATION1-1 MIKAGE-CHO SHUNAN-SHI YAMAGUCHI 7458648
NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY3-8-1 HARUMI-CHO FUCHU-SHI TOKYO 183-8538

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hiraren, Yuki Yamaguchi, JP 1 5
Koukitu, Akinori Tokyo, JP 38 242
Kumagai, Yoshinao Tokyo, JP 28 183
Nagashima, Toru Yamaguchi, JP 24 103

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