Method for producing thin film transistor
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United States of America Patent
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Jun 27, 2017
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Jul 1, 2014
filing date -
Oct 24, 2013
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Abstract
A method for producing a thin film transistor including an oxide semiconductor layer includes: depositing an oxide semiconductor film above a substrate by a sputtering method; and forming the oxide semiconductor layer into a predetermined shape by processing the oxide semiconductor film, wherein in the depositing of an oxide semiconductor film, a first oxide semiconductor film is deposited by using a first power density, and a second oxide semiconductor film is then deposited on the first oxide semiconductor film by using a second power density different from the first power density.
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