Manufacturing method of thin film transistor substrate
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United States of America Patent
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Jun 27, 2017
Grant Date -
Aug 4, 2016
app pub date -
Apr 12, 2016
filing date -
Dec 22, 2011
priority date (Note) -
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Abstract
The invention provides a manufacturing method of a thin film transistor substrate including: sequentially forming a gate electrode, a gate insulating layer covering the gate electrode, an active material layer, and a photo-sensitive material layer on a first substrate; performing a photolithography process by using a half tone mask to form a protective layer which is above the gate electrode and has a first recess and a second recess; wet etching the active material layer by using the protective layer as a mask to form an active layer; removing a portion of the protective layer at bottoms of the first recess and the second recess to expose a first portion and a second portion of the active layer respectively; forming a first electrode connecting to the first portion; and forming a second electrode connecting to the second portion.
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