Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations
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United States of America Patent
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Jun 27, 2017
Grant Date -
Jun 2, 2016
app pub date -
Jun 25, 2014
filing date -
Jun 25, 2014
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Abstract
Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.
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