Device for generating a voltage reference comprising a non-volatile memory cell
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United States of America Patent
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Jun 27, 2017
Grant Date -
Jun 22, 2017
app pub date -
Aug 23, 2016
filing date -
Dec 22, 2015
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Abstract
A device for generating a reference voltage includes a first non-volatile memory cell provided with a control-gate transistor and a reading transistor. The control-gate transistor includes a gate terminal, a body, a first conduction terminal and a second conduction terminal. The first conduction terminal and the second conduction terminal are connected together to form a control-gate terminal. The reading transistor includes a gate terminal that is connected to the gate terminal of the control-gate transistor to form a floating-gate terminal, a body, a third conduction terminal and a fourth conduction terminal. The device also includes a second, equivalent, memory cell. The source terminal of the first non-volatile memory cell and the source terminal of the second equivalent memory cell are connected together.
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