Method for producing a resistive random access memory
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United States of America Patent
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Jun 20, 2017
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Oct 7, 2016
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Oct 27, 2014
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Abstract
A method for producing a resistive random access memory includes preparing a first metal layer and sputtering a resistive switching layer on the first metal layer. Surface treatment is conducted on the resistive switching layer by using a plasma containing mobile ions to dope the mobile ions into the resistive switching layer. The polarity of the mobile ions is opposite to the polarity of oxygen ions. Then, a second metal layer is sputtered on the resistive switching layer.
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