Electronic devices comprising n-type and p-type superlattices
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United States of America Patent
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Jun 20, 2017
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Dec 21, 2015
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May 27, 2014
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Abstract
A superlattice and method for forming that superlattice are disclosed. In particular, an engineered layered single crystal structure forming a superlattice is disclosed. The superlattice provides p-type or n-type conductivity, and comprises alternating host layers and impurity layers, wherein: the host layers consist essentially of a semiconductor material; and the impurity layers consist essentially of a corresponding donor or acceptor material.
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