Method of manufacturing silicon carbide semiconductor device
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United States of America Patent
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Jun 20, 2017
Grant Date -
Aug 1, 2013
app pub date -
Nov 9, 2012
filing date -
Feb 1, 2012
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Abstract
A target made of a metal material is sputtered to form a metal film on a silicon carbide wafer. At this time, the metal film is formed under a condition that an incident energy of incidence, on the silicon carbide wafer, of the metal material sputtered from the target and a sputtering gas flowed in through a gas inlet port is lower than a binding energy of silicon carbide, and more specifically lower than 4.8 eV. For example, the metal film is formed while a high-frequency voltage applied between a cathode and an anode is set to be equal to or higher than 20V and equal to or lower than 300V.
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