Substrate for epitaxial growth, and crystal laminate structure
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United States of America Patent
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Jun 20, 2017
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Sep 11, 2015
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Sep 8, 2011
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A crystal laminate structure includes an epitaxial growth substrate including a β-Ga2O3-based single crystal and a (010) plane or a plane inclined at an angle not more than 37.5° with respect to the (010) plane as a main surface thereof and a high electrical resistance, and an epitaxial crystal formed on the main surface of the epitaxial growth substrate. The epitaxial crystal includes a Ga-containing oxide.
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