Selective nanoscale growth of lattice mismatched materials
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United States of America Patent
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Jun 20, 2017
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Jan 30, 2015
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Sep 14, 2010
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Abstract
Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.
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