Non-destructive readout ferroelectric memory as well as method of preparing the same and method of operating the same
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United States of America Patent
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Jun 20, 2017
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N/A
app pub date -
Jun 26, 2015
filing date -
Jan 24, 2015
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Abstract
A non-destructive readout ferroelectric memory as well as a method of preparing the ferroelectric memory and a method of operating the ferroelectric memory are disclosed. The ferroelectric memory comprises a ferroelectric thin film layer. The ferroelectric memory of the invention can realize a non-destructive readout by way of current, is suitable for a high density application, is simple in preparation and has a low cost.
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Patent Citation Ranking
- 3 Citation Count
- H01L Class
- 18.50 % this patent is cited more than
- 8 Age
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