Hetero-substrate, nitride-based semiconductor light emitting device, and method for manufacturing the same
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United States of America Patent
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Jun 13, 2017
Grant Date -
May 8, 2014
app pub date -
Oct 30, 2013
filing date -
Nov 2, 2012
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Abstract
A hetero-substrate, a nitride-based semiconductor light emitting device, and a method of manufacturing the same are provided. The hetero-substrate may include a substrate including a silicon semiconductor, a buffer layer disposed on the substrate, a first semiconductor layer disposed on the buffer layer and including a nitride semiconductor, a second semiconductor layer disposed on the first semiconductor layer and including a first conductive type nitride semiconductor having a first doping concentration, and a stress control structure disposed between the first semiconductor layer and the second semiconductor layer and including at least one stress compensation layer and at least one third semiconductor layer including a first conductive type nitride semiconductor having a second doping concentration that is the same or lower than the first doping concentration.
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