Access conductivity enhanced high electron mobility transistor
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United States of America Patent
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Jun 13, 2017
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Mar 17, 2015
filing date -
Mar 17, 2015
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Abstract
A high electron mobility transistor (HEMT) device with enhanced conductivity in the transistor's non-gated access regions and a method for making the HEMT device is disclosed. In one embodiment, the HEMT device includes a heterojunction comprising a barrier layer formed on a channel layer. One or more intervening layers comprising a material suitable for increasing a fixed charge at the heterojunction is formed on a substantially planar surface of the barrier layer opposite the channel layer in the non-gated access region.
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