Combined electrostatic lens system for ion implantation
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
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Jun 13, 2017
Issued Date -
N/A
app pub date -
Dec 22, 2015
filing date -
Dec 26, 2014
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A system and method are provided for implanting ions at low energies into a workpiece. An ion source configured to generate an ion beam is provided, wherein a mass resolving magnet is configured to mass resolve the ion beam. The ion beam may be a ribbon beam or a scanned spot ion beam. A mass resolving aperture positioned downstream of the mass resolving magnet filters undesirable species from the ion beam. A combined electrostatic lens system is positioned downstream of the mass analyzer, wherein a path of the ion beam is deflected and contaminants are generally filtered out of the ion beam, while concurrently decelerating and parallelizing the ion beam. A workpiece scanning system is further positioned downstream of the combined electrostatic lens system, and is configured to selectively translate a workpiece in one or more directions through the ion beam, therein implanting ions into the workpiece.
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
AXCELIS TECHNOLOGIES INC | 108 CHERRY HILL DRIVE BEVERLY MA 01915 |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Eisner, Edward C | Lexington, US | 22 | 145 |
# of filed Patents : 22 Total Citations : 145 | |||
Vanderberg, Bo H | Gloucester, US | 39 | 382 |
# of filed Patents : 39 Total Citations : 382 |
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Patent Citation Ranking
- 3 Citation Count
- H01J Class
- 25.25 % this patent is cited more than
- 8 Age
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