Thermodynamic random access memory for neuromorphic computing utilizing AHaH (anti-hebbian and hebbian) and memristor components
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Jun 13, 2017
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Aug 15, 2014
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Sep 9, 2013
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Abstract
A thermodynamic random access memory includes one or more AHaH (Anti-Hebbian and Hebbian) node wherein read out of data is accomplished via a common summing electrode through memristive components and wherein multiple input cells are simultaneously active. A ktRAM architecture comprising a memory wherein each input synapse or “bit” of the memory interacts on or with a common electrode through a common “dendritic” electrode, and wherein each input can be individually driven. Each input constitutes a memory cell driving a common electrode.
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