Precursors and methods for atomic layer deposition of transition metal oxides
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United States of America Patent
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Jun 13, 2017
Issued Date -
N/A
app pub date -
May 18, 2016
filing date -
Feb 25, 2010
priority date (Note) -
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status (Latency Note)
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Abstract
Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
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International Classification(s)
- 2016 Application Filing Year
- C23C Class
- 3247 Applications Filed
- 2111 Patents Issued To-Date
- 65.02 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 1 Citation Count
- C23C Class
- 27.20 % this patent is cited more than
- 8 Age
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