Growth of silicon and boron nitride nanomaterials on carbon fibers by chemical vapor deposition
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United States of America Patent
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Jun 13, 2017
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Nov 19, 2015
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May 14, 2015
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May 14, 2014
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Abstract
Methods of growing boron nitride nanotubes and silicon nanowires on carbon substrates formed from carbon fibers. The methods include applying a catalyst solution to the carbon substrate and heating the catalyst coated carbon substrate in a furnace in the presence of chemical vapor deposition reactive species to form the boron nitride nanotubes and silicon nanowires. A mixture of a first vapor deposition precursor formed from boric acid and urea and a second vapor deposition precursor formed from iron nitrate, magnesium nitrate, and D-sorbitol are provided to the furnace to form boron nitride nanotubes. A silicon source including SiH4 is provided to the furnace at atmospheric pressure to form silicon nanowires.
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