Power semiconductor transistor with improved gate charge
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United States of America Patent
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Jun 6, 2017
Grant Date -
Jul 7, 2016
app pub date -
Mar 10, 2016
filing date -
Mar 20, 2014
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Abstract
A slotted gate power transistor is a lateral power device including a substrate, a gate dielectric formed over the substrate, a channel region in the substrate below the gate dielectric and gate electrode layer formed over the gate dielectric. The gate electrode layer overlaps the gate dielectric above the channel region, an accumulation region, and a drift region below an oxide filled shallow trench isolation (or STI) or locally oxidized silicon (LOCOS) region. The slotted gate power transistor includes one or more slots or openings on the gate electrode layer over the accumulation region. Electrical connectivity is maintained over the entire gate electrode layer without external wiring.
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