Semiconductor structure having a source and a drain with reverse facets
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United States of America Patent
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Jun 6, 2017
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app pub date -
Nov 10, 2015
filing date -
Apr 13, 2012
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Abstract
A semiconductor structure including a semiconductor wafer. The semiconductor wafer includes a gate structure, a first trench in the semiconductor wafer adjacent to a first side of the gate structure and a second trench adjacent to a second side of the gate structure, the first and second trenches filled with a doped epitaxial silicon to form a source in the filled first trench and a drain in the filled second trench such that each of the source and drain are recessed and have an inverted facet. In a preferred exemplary embodiment, the epitaxial silicon is doped with boron.
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