Shallow trench textured regions and associated methods

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United States of America Patent

PATENT NO 9673250
APP PUB NO 20160035782A1
SERIAL NO

14884181

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Abstract

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Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation features.

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Patent Owner(s)

Patent OwnerAddress
SIONYX LLC100 CUMMINGS CTR SUITE 243-F BEVERLY MA 01915

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Haddad, Homayoon Beaverton, US 40 835
Jiang, Jutao Tigard, US 38 674

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